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mrf6v2300nr1 mrf6v2300nbr1 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed primarily for cw large--signal output and driver applications with frequencies up to 600 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical cw performance: v dd =50volts,i dq = 900 ma, p out = 300 watts, f = 220 mhz power gain ? 25.5 db drain efficiency ? 68% ? capable of handling 10:1 vswr, @ 50 vdc, 220 mhz, 300 watts cw output power features ? characterized with series equival ent large--signal impedance parameters ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs --0.5, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 83 c, 300 w cw r jc 0.24 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf6v2300n rev. 5, 4/2010 freescale semiconductor technical data mrf6v2300nr1 mrf6v2300nbr1 10--600 mhz, 300 w, 50 v lateral n--channel single--ended broadband rf power mosfets parts are single--ended (top view) rf out /v ds figure 1. pin connections rf out /v ds rf in /v gs rf in /v gs note: exposed backside of the package is the source terminal for the transistor. case 1484--04, style 1 t o -- 2 7 2 w b -- 4 plastic mrf6v2300nbr1 case 1486--03, style 1 t o -- 2 7 0 w b -- 4 plastic mrf6v2300nr1 ? freescale semiconductor, inc., 2007--2008, 2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 2.5 ma zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 50 adc drain--source breakdown voltage (i d = 150 ma, v gs =0vdc) v (br)dss 110 ? ? vdc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 800 adc) v gs(th) 1 1.63 3 vdc gate quiescent voltage (v dd =50vdc,i d = 900 madc, measured in functional test) v gs(q) 1.5 2.6 3.5 vdc drain--source on--voltage (v gs =10vdc,i d =2adc) v ds(on) ? 0.28 ? vdc dynamic characteristics reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.88 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 120 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 268 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 900 ma, p out = 300 w, f = 220 mhz, cw power gain g ps 24 25.5 27 db drain efficiency d 66 68 ? % input return loss irl ? -- 1 6 -- 9 db typical performances (in freescale 27 mhz and 450 mhz test fixtures, 50 ohm system) v dd =50vdc,i dq = 900 ma, p out = 300 w cw power gain f = 27 mhz f = 450 mhz g ps ? ? 31.4 21.7 ? ? db drain efficiency f = 27 mhz f = 450 mhz d ? ? 61.5 59.1 ? ? % input return loss f = 27 mhz f = 450 mhz irl ? ? --17.4 --24.4 ? ? db attention: the mrf6v2300n and mrf6v2300nb are hi gh power devices and special considerations must be followed in board design and mounting. incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temper ature. refer to freescale application note an3263 (for bolt down mounting) or an1907 (for solder reflow mounting) prior to starting system design to ensure proper mounting of these devices.
mrf6v2300nr1 mrf6v2300nbr1 3 rf device data freescale semiconductor figure 2. mrf6v2300nr1(nbr1) test circuit schematic ? 220 mhz z8 0.085 x 0.170 microstrip z9 2.275 x 0.170 microstrip z10 0.945 x 0.170 microstrip z11 0.443 x 0.082 microstrip pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 z1 0.352 x 0.082 microstrip z2 1.567 x 0.082 microstrip z3 0.857 x 0.082 microstrip z4 0.276 x 0.220 microstrip z5 0.434 x 0.220 microstrip z6, z7 0.298 x 0.630 microstrip z1 rf input c12 z2 z3 z4 z5 z6 dut z9 c23 rf output z10 c5 b1 v bias v supply c3 + c4 c2 + r1 c18 c19 c17 c20 + c1 + c7 c6 b2 z7 z11 z8 b3 c22 c21 r2 r3 c9 c8 c11 c10 c13 l1 l2 c14 c15 c16 table 6. mrf6v2300nr1(nbr1) test circuit c omponent designations and values ? 220 mhz part description part number manufacturer b1, b2 95 ? , 100 mhz long ferrite beads, surface mount 2743021447 fair--rite b3 47 ? , 100 mhz short ferrite bead, surface mount 2743019447 fair--rite c1 47 f, 50 v electrolytic capacitor 476kxm063m illinois capacitor c2 22 f, 35 v tantalum capacitor t494x226k035at kemet c3 10 f, 35 v tantalum capacitor t491d106k035at kemet c4, c19 10 k pf chip capacitors atc200b103kt50xt atc c5, c18 20 k pf chip capacitors atc200b203kt50xt atc c6,c11,c17 0.1 f, 50 v chip capacitors cdr33bx104akys avx c7, c8, c15, c16 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c10 220 nf chip capacitor c1206c224z5vac kemet c9, c12, c14, c23 1000 pf chip capacitors atc100b102jt50xt atc c13 82 pf chip capacitor atc100b820jt500xt atc c20 470 f, 63 v electrolytic capacitor 477kxm063m illinois capacitor c21 24 pf chip capacitor atc100b240jt500xt atc c22 39 pf chip capacitor atc100b390jt500xt atc l1 4 turn #18 awg, 0.18 id none none l2 82 nh inductor 1812sms--82nj coilcraft r1 270 ? , 1/4 w chip resistor CRCW12062700FKTA vishay r2, r3 4.75 ? , 1/4 w chip resistors crcw12064r75fkta vishay
4 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 figure 3. mrf6v2300nr1(nbr1) test ci rcuit component layout ? 220 mhz mrf6v2300n/nb cut out area c2 + + rev. 3 c3 b1 c7 b2 c4 c5 c6 c8 r1 c9 r2 r3 c12 c13 c22 c21 c23 c14 l1 l2 c17 c18 c19 c15* c16* b3 c20 c10 c11 * stacked c1
mrf6v2300nr1 mrf6v2300nbr1 5 rf device data freescale semiconductor typical characteristics 50 1 1000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 1 100 1 t c =25 c 10 10 v ds , drain--source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 40 0 10 0 drain voltage (volts) 9 8 7 6 20 120 figure 6. dc drain current versus drain voltage i d , drain current (amps) 60 600 22 28 i dq = 1350 ma 10 26 25 24 p out , output power (watts) cw figure 7. cw power gain versus output power g ps , power gain (db) v dd =50vdc f1 = 220 mhz 100 10 40 100 27 5 v gs =3v c oss c rss 80 100 4 3 2 1 2.75 v 2.63 v 2.5 v 2.25 v 23 100 1125 ma 900 ma 650 ma 450 ma 100 -- 5 5 -- 1 5 1 p out , output power (watts) pep -- 2 5 -- 3 0 -- 3 5 -- 4 0 10 600 figure 8. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) v dd = 50 vdc, f1 = 220 mhz, f2 = 220.1 mhz two--tone measurements, 100 khz tone spacing -- 4 5 -- 5 0 -- 2 0 i dq = 450 ma 1350 ma 900 ma 650 ma 1125 ma 34 50 60 24 28 26 58 56 54 52 p in , input power (dbm) figure 9. cw output power versus input power p out , output power (dbm) 30 32 p3db = 55.76 dbm (377 w) actual ideal p1db = 55.04 dbm (319 w) v dd =50vdc,i dq = 900 ma f = 220 mhz measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc
6 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 typical characteristics figure 10. power gain versus output power p out , output power (watts) cw g ps , power gain (db) v dd =20v 25 v 400 14 28 0 200 50 18 16 100 150 24 22 26 i dq = 900 ma f = 220 mhz 35 v 40 v 50 v 20 250 300 350 45 v 35 35 60 10 25 _ c t c =--30 _ c 85 _ c 25 15 50 45 40 p in , input power (dbm) figure 11. power output versus power input p out , output power (dbm) v dd =50vdc i dq = 900 ma f = 220 mhz 20 30 55 22 29 5 10 80 10 28 26 24 70 60 50 40 30 20 p out , output power (watts) cw figure 12. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) d 27 25 23 100 600 25 _ c t c =--30 _ c 85 _ c 85 _ c -- 3 2 -- 2 8 -- 2 9 -- 3 0 -- 3 1 -- 3 3 imd3 (dbc) g ps , power gain (db) 240 160 imd3 g ps f, frequency (mhz) figure 13. vhf broadcast broadband performance 230 220 210 200 190 180 170 25 24 15 65 55 45 40 30 20 d , drain efficiency (%) 22 20 18 16 15 23 21 19 17 60 50 35 25 d v dd =50v,p out = 300 w (peak) i dq = 1100 ma, tone--spacing = 100 khz g ps v dd =50vdc i dq = 900 ma f = 220 mhz 25 _ c -- 3 0 _ c 30 v
mrf6v2300nr1 mrf6v2300nbr1 7 rf device data freescale semiconductor typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 14. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 300 w cw, and d = 68%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230
8 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 z o =5 ? z load z source f = 220 mhz f = 220 mhz v dd =50vdc,i dq = 900 ma, p out = 300 w cw f mhz z source ? z load ? 220 1.23 + j3.69 2.43 + j2.04 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance ? 220 mhz z source z load input matching network device under test output matching network
mrf6v2300nr1 mrf6v2300nbr1 9 rf device data freescale semiconductor figure 16. mrf6v2300nr1(nbr1) test circuit component layout ? 27 mhz cut out area c20 c19 b1 c18 c17 c16 c15 b2 c14 c11 c13 c12 l2*, r3*, ** c2 c1 t1 l1 c6 c3 c5 c4 r1 r2 c7 c8 t2 c9 c10 c23 c22 c21 l3*, r4*, ** c24 b3 c25 27 mhz 272--wb rev. 0 table 7. mrf6v2300nr1(nbr1) test circuit c omponent designations and values ? 27 mhz part description part number manufacturer b1, b3 95 ? , 100 mhz long ferrite beads 2743021447 fair--rite b2 47 ? , 100 mhz short ferrite bead 2743019447 fair--rite c1 160 pf chip capacitor atc100b161jt500xt atc c2 620 pf chip capacitor atc100b621jt100xt atc c3, c4, c5 1000 pf chip capacitors atc100b102jt50xt atc c6 68 pf chip capacitor atc100b680jt500xt atc c7, c8 330 pf chip capacitors atc100b331jt200xt atc c9 51 pf chip capacitor atc100b510gt500xt atc c10 240 pf chip capacitor atc100b241jt200xt atc c11, c16, c24 0.1 f chip capacitors cdr33bx104akys kemet c12, c17 22k pf chip capacitors atc200b223kt50xt atc c13 0.22 f, 50 v chip capacitor c1812c224k5rac--tu kemet c14, c15 2.2 f, 50 v chip capacitors c1825c225j5rac--tu kemet c18, c21, c22 39k pf chip capacitors atc200b393kt50xt atc c19 10 f, 35 v tantalum capacitor t491d106k035at kemet c20 22 f, 35 v tantalum capacitor t491x226k035at kemet c23 0.01 f, 100 v chip capacitor c1825c103k1gac--tu kemet c25 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp l1 100 nh inductor 1812sms--r10j coilcraft l2* 11 turn, #16 awg, inductor, hand wound, 0.375 id copper wire l3* 9 turn, #16 awg, inductor, hand wound, 0.375 id copper wire r1, r2 3.3 ? , 1/4 w chip resistors rk73b2ettd3r3j koa r3*, ** 110 ? , 1/4 w carbon resistor mccfr0w4j0111a50 multicomp r4*, ** 510 ? , 1/2 w carbon resistor mcrc1/2g511jt--rh multicomp t1 rf600 transformer 16:1 impedance ratio rf600lf--16 comm concepts t2 rf1000 transformer 9:1 impedance ratio rf1000lf--9 comm concepts * leaded components mounted over traces. ** resistor is mounted at center of inductor coil.
10 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 figure 17. mrf6v2300nr1(nbr1) test ci rcuit component layout ? 450 mhz cut out area c4 450 mhz 272--wb c5 c5 c3 b1 c6 c7 c8 l1 c24 c1 c2 c10 l2 c9 l3 c20 c21 c22 c19 l5 b2 c23 c18 c13 c14 l4 c11 c12 c15 c17 c16 rev. 2 table 8. mrf6v2300nr1(nbr1) test circuit c omponent designations and values ? 450 mhz part description part number manufacturer b1, b2 95 ? , 100 mhz long ferrite beads 2743021447 fair--rite c1, c9, c17, c18 240 pf chip capacitors atc100b241jt50xt atc c2 47 pf chip capacitor atc100b470jt500xt atc c3 47 f, 50 v electrolytic capacitor 476kxm050m illinois capacitor c4 22 f, 35 v tantalum capacitor t491x226k035at kemet c5 10 f, 35 v tantalum capacitor t491d106k035at kemet c6, c20 10k pf chip capacitors atc200b103kt50xt atc c7, c21 20k pf chip capacitors atc200b203kt50xt atc c8, c22 0.1 f chip capacitors cdr33bx104akys avx c10, c19 2.2 f, 50 v chip capacitors c1825c225j5rac--tu kemet c11, c13 15 pf chip capacitors atc100b150jt500xt kemet c12, c14 6.8 pf chip capacitors atc100b6r8jt500xt atc c15 9.1 pf chip capacitor atc100b120jt500xt atc c16 10 pf chip capacitor atc100b100jt500xt atc c23 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp c24 2 pf chip capacitor atc100b2r0jt500x atc l1 12.5 nh inductor a04tjlc coilcraft l2 8 nh inductor a03tklc coilcraft l3, l5 82 nh, midi springs 1812sms--82njlc coilcraft l4 2 turn, #18 awg, inductor, hand wound, 0.090 id copper wire pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 ds2054 ds electronics
mrf6v2300nr1 mrf6v2300nbr1 11 rf device data freescale semiconductor z o =25 ? f=27mhz z source f = 450 mhz z load f=27mhz z load f = 450 mhz z source v dd =50vdc,i dq = 900 ma, p out = 300 w cw f mhz z source ? z load ? 27 10.5 + j19.0 3.50 + j0.19 450 0.50 + j1.37 1.25 + j0.99 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 18. series equivalent source and load impedance ? 27, 450 mhz z source z load input matching network device under test output matching network
12 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 package dimensions
mrf6v2300nr1 mrf6v2300nbr1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1
mrf6v2300nr1 mrf6v2300nbr1 15 rf device data freescale semiconductor
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mrf6v2300nr1 mrf6v2300nbr1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor mrf6v2300nr1 mrf6v2300nbr1 product documentation and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2007 ? initial release of data sheet 1 feb. 2007 ? added fig. 1, pin connections, p. 1 ? removed footnote references listed for operating junc tion temperature, table 1, maximum ratings, p. 1 ? added max value to power gain, table 5, functional tests, p. 2 2 may 2007 ? corrected test circuit component part numbers in t able 6, component designations and values for c4, c19, c5, c18, c9, c12, c14, and c23, p. 3 3 jan. 2008 ? increased operating frequency to 600 mhz, p. 1 ? added case operating temperature limit to th e maximum ratings table and set limit to 150 c, p. 1 ? corrected c iss test condition to indica te ac stimulus on the v gs connection versus the v ds connection, dynamic characteristics table, p. 2 ? updated pcb information to show more specific mate rial details, fig. 2, tes t circuit schematic, p. 3 ? replaced case outline 1486--03, issue c, with 1486--03, issue d, p. 9--11. added pin numbers 1 through 4 on sheet 1. ? replaced case outline 1484--04, issue d, with 1484--04, issue e, p. 12--14. added pin numbers 1 through 4 on sheet 1, replacing gate and drain not ations with pin 1 and pin 2 designations. 4 dec. 2008 ? added typical performances table for 27 mhz, 450 mhz applications, p. 2 ? added figs. 16 and 17, test circuit component layout -- 27 mhz and 450 mhz, and tables 7 and 8, test circuit component designations and va lues -- 27 mhz and 450 mhz, p. 9, 10 ? added fig. 18, series equivalent sour ce and load impedance for 27 mhz, 450 mhz, p. 11 5 apr. 2010 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related ?continuous use at maximum temperature will affect mttf? footnote added and changed 200 c to 225 c in capable plastic package bullet, p. 1 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 18
mrf6v2300nr1 mrf6v2300nbr1 19 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007--2008, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6v2300n rev. 5, 4/2010

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